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Materials Science & Eng.Materials Science & Eng.Chemical & Biomolecular Eng.

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Home » Prof. Ramki Kalyanaraman, MSE & CBE


Research topic: Energetic beam processing

Please click here for publications in this area. 

Energetic beams such as short pulse lasers and ion beams provide unique pathways to access metastable structures and self-organizing nanoscale patterns.  Our work in this area is presently focussed on the use of nanosecond pulsed lasers to manipulate the morphology of thin films. Previously, we have focussed on understanding defect generation from high-energy ion implantation into Si.


Energetic beam interactions and structure-processing-property correlations

  1. L. Longstreth-Spoor, J. Trice, H. Garcia, C. Chang, and R. Kalyanaraman, Nanostructure and microstructure of laser-interference induced dynamic patterning of Co on Si, J.Phys. D: Appl. Phys. 39, 5149-5159  (2006).
  2. W. Zhang, C. Zhang and R. Kalyanaraman, Dynamically ordered thin film nanoclusters, J. Vac. Sci. Tech.  B 23, L5-L8 (2005). (Also selected for publication in the Aug 8, 2005 issue of Virtual Journal of Nanoscale Science & Technology, AIP publications)
  3. C. Zhang and R. Kalyanaraman, In-situ lateral patterning of thin films of various materials deposited by  physical vapor deposition, J. Mat. Res. 19, 595-599 (2004).
  4. C. Zhang and R. Kalyanaraman, In-situ nanostructured film formation during physical vapor deposition, App. Phys. Lett. 83, 4827-4829 (2003).
  5. S.P. Withrow, C.W. White, J.D. Budai, L.A. Boatner, K.D. Sorge, J.R. Thompson, and R. Kalyanaraman,  Ion beam synthesis of magnetic Co-Pt alloys in Al2 O3 , J. Mag. Mag. Mat. 260, 319-329 (2003).
  6. R. Kalyanaraman, V.C. Venezia, L. Pelaz, T.E. Haynes, H.-J.L. Gossmann and C.S. Rafferty, Enhanced  Low Temperature Activation of B in Si, App. Phys. Lett. 82, 215-217 (2003).
  7. R. Kalyanaraman, T.E. Haynes, O.W. Holland, and G.H. Gilmer, Character of defects at an ion-irradiated  buried thin-film interface, J. Appl. Phys. 91, 6325-6332 (2002).
  8. R. Kalyanaraman, T.E. Haynes, O.W. Holland, H.-J.L. Gossmann, C.S. Rafferty, and G.H. Gilmer, Binding energy of vacancies to clusters formed in Si by high-energy ion implantation, App. Phys. Lett. 79, 1983-1985 (2001).
  9. V.C. Venezia, R. Kalyanaraman, H.-J. Gossmann, C. S. Rafferty, and D. J. Eaglesham, Depth dependence of {311} defect dissolution, App. Phys. Lett. 79, 1429-1431 (2001).
  10. R. Kalyanaraman, T.E. Haynes, M. Yoon, B.C. Larson, D.C. Jacobson, H.-J. Gossmann, and C.S. Rafferty, Quantitative evolution of vacancy-type defects in high-energy ion implanted Si: Au labeling and the vacancy implanter, Nucl. Inst. Meth. Phys. Res. B, 175-177, 182-186 (2001).
  11.  R. Kalyanaraman, T.E. Haynes, V.C. Venezia, D.C. Jacobson, H-J. Gossmann, and C.S. Rafferty, Calibration of the Au labeling technique for measuring vacancy concentrations from high-energy ion implantation in Si, App. Phys. Lett. 76, 3379-3381 (2000).
  12. V.C. Venezia, R. Brown. R. Kalyanaraman, T. E. Haynes, O. W. Holland, and J. Williams, Comment on the paper entitled "Interstitial-type defects away from the projected ion range in high energy ion implanted and annealed silicon", App. Phys. Lett. 77, 151-153 (2000).





Contact Ramki Kalyanaraman

304 Dougherty Hall
University of Tennessee
Knoxville, TN 37996-2200
Phone: (865) 974-5335 (secy)
Fax: (865) 974-4115
Email: ramki at utk dot edu